Deep comparison of three main technical routes of semiconductor lighting
In the process of LED preparation, the upstream substrate material is the main factor that determines the performance indexes such as LED color, brightness and service life.
In the process of LED preparation, the upstream substrate material is the main factor that determines the performance indexes such as LED color, brightness and service life. The surface roughness, coefficient of thermal expansion, coefficient of thermal conductivity, influence of polarity, surface processing requirements and lattice matching with epitaxial materials are closely related to the luminous efficiency and stability of high brightness LED. Therefore, substrate material is the cornerstone of the technological development of semiconductor lighting industry. The technical route of substrate material will inevitably affect the technical route of the whole industry and is the key of the whole industrial chain. At present, there are three main technical routes for semiconductor lighting, namely, sapphire substrate LED technology route represented by Japan Riya chemical, silicon carbide substrate LED technology route represented by American Cree, and silicon substrate LED technology route represented by China crystal energy optoelectronics. On January 8, 2016, the "silicon substrate high luminous efficiency GaN based blue light emitting diode" technology project of Jiang Fengyi team of Nanchang University and crystal energy optoelectronics won the only first prize in the technical invention category of the 2015 National Science and technology award, and the dream of Chinese core in the LED industry was inspired again. The award of silicon substrate technology project shows that silicon substrate has been proved feasible by the state and has been upgraded to the national strategic level. Silicon substrate may usher in large-scale commercial applications.